26 lines
907 B
Plaintext
26 lines
907 B
Plaintext
Version 4
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SHEET 1 1796 1732
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WIRE -496 832 -736 832
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WIRE -208 832 -416 832
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WIRE -736 848 -736 832
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WIRE -208 848 -208 832
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WIRE -208 928 -208 912
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WIRE -736 944 -736 928
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FLAG -736 944 0
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FLAG -208 928 0
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SYMBOL voltage -736 832 R0
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WINDOW 123 24 138 Left 2
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WINDOW 39 24 117 Left 2
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SYMATTR InstName V3
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SYMATTR Value PULSE(10 -10 .5u 10n 10n 20u 40u)
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SYMBOL diode -224 848 R0
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SYMATTR InstName D3
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SYMATTR Value x
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SYMBOL res -512 848 R270
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WINDOW 0 32 56 VTop 2
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WINDOW 3 0 56 VBottom 2
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SYMATTR InstName R1
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SYMATTR Value 1
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TEXT -800 1000 Left 2 !.tran 0 60u\n.model X D(Rs=0 Is=1e-10 tt=3u Vp={Vp} Cjo=10n)\n.step param Vp list 0 .2 .4 .6 .8 1
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TEXT -456 776 Bottom 2 ;This example shows the use of dQ/dt damping parameter Vp to control diode soft recovery.\n \nSee K.J. Teng and S. Pan: 'Modified charge-control equation for simulation of diode reverse recovery',\nElectronics Letters, 15th February 1996 Vol. 32 No. 4
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